A2T18S162W31 32 W RF power LDMOS transistors for cellular base station applications requiring very wide instantaneous bandwidth in the 1805-1880 MHz bands
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ARCHIVED - A2T18S162W31S, A2T18S162W31GS 1805-1880 MHz, 32 W Avg., 28 V Airfast<sup>?</sup> RF Power LDMOS Transistors Data Sheet
A2T18S162W31 32 W RF power LDMOS transistors for cellular base station applications requiring very wide instantaneous bandwidth in the 1805-1880 MHz bands